NEW YORK & TOKYO & DÜSSELDORF--(BUSINESS WIRE)--Crystal IS, an Asahi Kasei company, today announced the successful serial production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates ...

Using GaN as a substrate holds promise for many industries, but has immediate applications for light-emitting diodes (LEDs), which Soraa manufactures. A major advancement in a commercially viable new ...

Researchers at US-based Technology and Devices International (TDI) have created a gallium nitride (GaN) bulk substrate, which they say will improve the performance and lifetimes of GaN-based device ...

A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...

Following the first reported 100 mm diameter AlN in 2023, the company now announces improved wafer quality based on specification for UVC LEDs "The improvement of our large diameter substrate quality ...