Historically reliant on 6-inch wafers, the shift to 8-inch SiC marks a critical advancement in scalability, cost-effectiveness, and manufacturing maturity. This investment not only reflects ...

IGBTs combine the benefits of a voltage-driven insulated gate of MOSFETs with the improved bipolar conduction of BJTs.

Tsuriel Avraham and his colleagues from Ariel University reviewed reliability challenges and models for SiC and GaN power devices.

Integrating liquid-metal packaging into a SiC half-bridge power module is an innovative solution to longstanding challenges.

Agnit Semiconductors is working to establish India’s self-reliance in Gallium Nitride (GaN) technology. Bengaluru-based Agnit Semiconductors is emerging as a trailblazer in Gallium Nitride (GaN) ...

Innovation in power electronics is shifting from a focus on semiconductor materials to a broader system-level engineering approach.

These fully assembled power modules address key challenges in heat management, form factor constraints, and safety.

Forced resonance soft switching topologies have the same advantages as the previous one, but are computationally demanding, cumbersome and with limited adaptability to different input conditions and ...

The technological results obtained by electric motors and batteries have required developing power conversion systems and motor control techniques capable of maximizing efficiency and reliability.

Learn About Class D Power Amplifier Circuit Design (with Diagrams), Schematics, and Efficiency. Plus, See How It Compares to an AB Amp. Visit Today!

As fascinating and challenging as the PCB design process can be, it is important to take all necessary precautions to ensure proper circuit operation, especially when dealing with high power PCBs. As ...

This article will introduce the fundamental concepts that every designer, maker, or student must master to face a motor control application Electric motors are widely used in several electronic ...