Historically reliant on 6-inch wafers, the shift to 8-inch SiC marks a critical advancement in scalability, cost-effectiveness, and manufacturing maturity. This investment not only reflects ...

IGBTs combine the benefits of a voltage-driven insulated gate of MOSFETs with the improved bipolar conduction of BJTs.

Tsuriel Avraham and his colleagues from Ariel University reviewed reliability challenges and models for SiC and GaN power devices.

Integrating liquid-metal packaging into a SiC half-bridge power module is an innovative solution to longstanding challenges.

The evolution of batteries reflects technological progress and the ever-increasing demands of modern society.

In this last installment, we terminate our overview of gallium nitride (GaN)-based solutions from leading power device manufacturers.

The demand for greater efficiency, density, and reliability in power delivery is driving semiconductor innovation as artificial intelligence reshapes data centers. Renesas Electronics is leveraging ...

This year, Bosch took advantage of the PCIM event to assert its ambition to secure a significant position in the SiC market.

An optimized gate drive is especially important for driving Wide Band Gap (WBG) power devices such as those based on silicon carbide (SiC) or gallium nitride (GaN). Fast switching in such converters ...

In Part 1, we began an overview of gallium nitride–based solutions provided by leading electronic components manufacturers. In this article, we continue our roundup of GaN products by exploring ...

SiC MOSFETs in a high-power LLC DC/DC converter stage enable a 30% space savings while achieving stable operation and high efficiency.

Ultra-wide bandgap (UWBG) materials can expand the range of improvements that wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) offer in power conversion ...