Direct dielectric cooling brings insulating liquid closer to SiC/GaN devices, shortening thermal paths but complicating ...

The NCU01 series maintains ±1% resistance and B-constant tolerances, with initial samples planned for October 2026 and ...

The deal adds more than 15 GW of deployed power conversion technology and strengthens capabilities in grid stabilization and ...

SiC and GaN thermal management relies on multiscale simulation spanning device-level FEA to system-level electro-thermal ...

The dual-phase EVAL-LT7930-AZ combines ADI’s LT7930 controller with EPC2361 transistors for high-current power conversion.

V SiC technology targets higher efficiency and power density in AI data centers, energy storage, and grid applications.

The PowerTitan 3.0 platform supports conversion units up to 450 kW and could save over 475 MWh annually in a 100 MW ...

Four YMIN LKZ capacitors replace 48 MLCCs in robot joint motor controllers, reducing PCB space by 20% and costs by over 60%.

Fe1767, which Ferric calls the world's first dual-sided IVR, lowers input/output PDN impedance and frees BGA balls.

The GaN-based platform targets 97% full-load efficiency and over 2,000 W/in³ power density while simplifying high-power compute tray designs.

Five output-voltage options, 2×MOPP isolation, and protection features support integration into demanding medical and ...

The purpose, applications, and improvements of the GaN-based dual-side cooled package versus TOLT variants. Renesas Electronics recently released a 650-V, 20-mΩ d-mode GaN FET built on Gen 4+ ...