IGBTs combine the benefits of a voltage-driven insulated gate of MOSFETs with the improved bipolar conduction of BJTs.

Innovation in power electronics is shifting from a focus on semiconductor materials to a broader system-level engineering approach.

Integrating liquid-metal packaging into a SiC half-bridge power module is an innovative solution to longstanding challenges.

In recent years, advancements in power transistor efficiency have shifted the focus toward enhancing the performance of power inductors. Low-loss inductors offer a significant opportunity to increase ...

TRIACs, devices derived from SCRs, offer advanced functionalities and greater versatility in both DC and AC applications. In the previous installment of the course, we explored “Silicon Controlled ...

This year, Bosch took advantage of the PCIM event to assert its ambition to secure a significant position in the SiC market.

Protecting semiconductor devices and electronic equipment is key to any robust power management and circuit design. In this article, we will highlight the new family of Asymmetric Transient Voltage ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments.

The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...

In the field of power electronics, thermal management has become a critical factor in ensuring device reliability, efficiency, and longevity.

Electric motors are the beating heart of sustainable mobility. They play a fundamental role in transforming the automotive industry and beyond. With the increasing adoption of EVs and a growing focus ...

Silicon Carbide (SiC) is a compound semiconductor composed of silicon (Si) and carbon (C). SiC can be doped by n-type with nitrogen or phosphorous and p-type with beryllium, boron, aluminum, or ...